BSS127 sipmos ? small-signal-transistor feature ? n-channel ? enhancement mode ? logic level ? d v /d t rated ? pb-free lead plating, rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t a =25 c 0.021 a t a =70 c 0.017 pulsed drain current i d,pulse t a =25 c 0.09 reverse diode d v /d t d v /d t i d =0.09 a, v ds =480 v, d i /d t =200 a/s, t j,max =150 c 6 kv/s gate source voltage v gs 20 v esd sensitivity (hbm) as per mil-std 883 class 1 power dissipation p tot t a =25 c 0.50 w operating and storage temperature t j , t stg -55 ... 150 c iec climatic category; din iec 68-1 55/150/56 value v ds 600 v r ds(on),max 500 ? i d 0.023 a product summary type package ordering code tape and reel information marking BSS127 pg-sot23 q67045-a5014 e6327: 3000pcs/reel si pg-sot23 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - minimal footprint r thja - - 250 k/w electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =250 a 600 - - v gate threshold voltage v gs(th) v ds =0 v, i d =8 a 1.4 2.0 2.6 drain-source leakage current i d (off) v ds =600 v, v gs =0 v, t j =25 c - - 0.1 a v ds =600 v, v gs =0 v, t j =150 c --10 gate-source leakage current i gss v gs =20 v, v ds =0 v - 10 100 na drain-source on-state resistance r ds(on) v gs =4.5 v, i d =0.016 a - 330 600 ? v gs =10 v, i d =0.016 a - 310 500 transconductance g fs | v ds |>2| i d | r ds(on)max , i d =0.01 a 0.007 0.015 - s values 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com BSS127 product specification
parameter symbol conditions unit min. typ. max. d y namic characteristics input capacitance c iss -2128pf output capacitance c oss - 2.4 3 reverse transfer capacitance c rss - 1.0 1.5 turn-on delay time t d(on) - 6.1 19.0 ns rise time t r - 9.7 14.5 turn-off delay time t d(off) -14 21 fall time t f - 115 170 gate charge characteristics gate to source charge q gs - 0.05 0.08 nc gate to drain charge q gd - 1.2 1.8 gate charge total q g - 1.4 2.1 gate plateau voltage v plateau - 3.5 - v reverse diode diode continous forward current i s - - 0.016 a diode pulse current i s,pulse - - 0.09 diode forward voltage v sd v gs =0 v, i f =0.016 a, t j =25 c - 0.82 1.2 v reverse recovery time t rr - 160 240 ns reverse recovery charge q rr - 13.2 19.8 nc v r =300 v, i f =0.016 a, d i f /d t =100 a/s t a =25 c values v gs =0 v, v ds =25 v, f =1 mhz v dd =300 v, v gs =10 v, i d =0.01 a, r g =6 ? v dd =400 v, i d =0.01 a, v gs =0 to 10 v 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com BSS127 product specification
|
